生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.38 | 最大集电极电流 (IC): | 0.03 A |
配置: | Single | 最小直流电流增益 (hFE): | 90 |
JESD-30 代码: | R-PDSO-F3 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.1 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 标称过渡频率 (fT): | 5000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5490A_12 | SANYO |
获取价格 |
UHF to S-Band Low-Noise Amplifier Applications | |
2SC5490A-TL-H | ONSEMI |
获取价格 |
射频晶体管,NPN 单,10 V,30 mA,fT = 8 GHz | |
2SC5497 | TOSHIBA |
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NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | |
2SC5501 | SANYO |
获取价格 |
VHF to UHF Low-Noise Wide-Band Amplifier Applications | |
2SC5501A | SANYO |
获取价格 |
VHF to UHF Wide-Band Low-Noise Amplifier Applications | |
2SC5501A_12 | SANYO |
获取价格 |
VHF to UHF Wide-Band Low-Noise Amplifier Applications | |
2SC5501A-4 | ONSEMI |
获取价格 |
暂无描述 | |
2SC5501A-4-TR-E | ONSEMI |
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VHF to UHF Wide-Band Low-Noise Amplifier Applications | |
2SC5502 | SANYO |
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High-Frequency Low-Noise Amplifier Applications | |
2SC5502-4 | ETC |
获取价格 |
BJT |