Datasheet > 2SC5453

2SC5453

更新时间： 2024-09-18 22:52:47

品牌	Logo	应用领域
三洋 - SANYO		显示器输出应用
页数	文件大小	规格书
4页	44K
描述
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC5453 数据手册

Ordering number:EN5958

NPN Triple Diffused Planar Silicon Transistor

2SC5453

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

Features

Package Dimensions

unit:mm

· High speed.

· High breakdown voltage (V

· High reliability (Adoption of HVP process).

· Adoption of MBIT process.

=1600V).

CBO

2048B

[2SC5453]

20.0

3.3

5.0

2.0

3.4

0.6

1.2

1 : Base

2 : Collector

3 : Emitter

5.45

SANYO : TO-3PBL

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

1600

800

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

Collector Current (Pulse)

3.5

210

150

˚C

Collector Dissipation

Tc=25˚C

Junction Temperature

Storage Temperature

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

1.0

Collector Cutoff Current

=1600V, R =0

CE BE

CES

Collector-to-Emitter Sastain Voltage

Emitter Cutoff Current

=100mA, I =0

800

CEO(sus)

=4V, I =0

1.0

µA

EBO

Collector Cutoff Current

=800V, I =0

CBO

=5V, I =1.0A

=5V, I =18A

DC Current Gain

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

61099TS (KOTO) TA-1383 No.5958–1/4

12 3 4

中文翻译

下载PDF

与2SC5453相关器件

型号	品牌	获取价格	描述	数据表
2SC5454	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD
2SC5454	RENESAS	获取价格	NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD
2SC5454(NE67739)	NEC	获取价格	Discrete
2SC5454FB	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-4
2SC5454-FB	NEC	获取价格	暂无描述
2SC5454-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD
2SC5455	RENESAS	获取价格	NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD
2SC5455	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD
2SC5455(NE67839)	NEC	获取价格	Discrete
2SC5455FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD P