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2SC5458(2-7B2A) PDF预览

2SC5458(2-7B2A)

更新时间: 2024-11-20 14:46:23
品牌 Logo 应用领域
东芝 - TOSHIBA 开关晶体管
页数 文件大小 规格书
5页 178K
描述
TRANSISTOR 800 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

2SC5458(2-7B2A) 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.88Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):2300 ns
最大开启时间(吨):500 nsBase Number Matches:1

2SC5458(2-7B2A) 数据手册

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2SC5458  
TOSHIBA Transistor Silicon NPN Triple Diffused Type  
2SC5458  
High Voltage Switching Applications  
Unit: mm  
Switching Regulator Applications  
DC-DC Converter Applications  
DC-AC Inverter Applications  
Excellent switching times: t = 0.5 μs (max)  
r
t = 0.3 μs (max) (I = 0.4 A)  
f
C
High collector breakdown voltage: V  
= 400 V  
CEO  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
600  
400  
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
7
DC  
I
0.8  
C
Collector current  
Base current  
A
A
JEDEC  
JEITA  
Pulse  
I
1.5  
CP  
I
0.5  
B
TOSHIBA  
2-7J1A  
Ta = 25°C  
Tc = 25°C  
1.0  
Collector power  
dissipation  
P
W
C
10  
Weight: 0.36 g (typ.)  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2010-02-05  

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