2SC5454-FB

更新时间： 2024-11-20 13:04:19

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日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管
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中文翻译

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数据手册

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2SC5454-FB 数据手册

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

2SC5454

NPN EPITAXIAL SILICON TRANSISTOR

4-PIN MINI MOLD

FEATURE

PACKAGE DIMENSIONS (in mm)

•

High gain, low noise

+0.2

–0.3

+0.2

–0.1

2.8

Small reverse transfer capacitance

Can operate at low voltage

1.5

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

5°

°C

Total Power Dissipation

Junction Temperature

Storage Temperature

200

150

PIN CONNECTIONS

1: Collector

2: Emitter

Tstg

–65 to +150

3: Base

4: Emitter

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PARAMETER

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

SYMBOL

ICBO

TEST CONDITIONS

VCB = 5 V, IE = 0

MIN.

TYP.

MAX.

0.1

UNIT

µA

IEBO

VEB = 1 V, IC = 0

0.1

µA

hFE

VCE = 3 V, IC = 20 mA^{Note 1}

VCE = 3 V, IC = 20 mA, f = 2 GHz

VCB = 3 V, IE = 0, f = 1 MHz^{Note 2}

VCE = 3 V, IC = 20 mA, f = 2 GHz

VCE = 3 V, IC = 5 mA, f = 2 GHz

150

Gain Bandwidth Product

Reverse Transfer Capacitance

Insertion Power Gain

Noise Figure

14.5

0.3

GHz

Cre

0.5

2.5

|S21e|²

12.0

1.5

Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 %

2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when

emitter pin is connected to the guard pin.

Because this product uses high-frequency process, avoid excessive input of static electricity, etc.

The information in this document is subject to change without notice.

Document No. P13080EJ1V0DS00 (1st edition)

Date Published February 1998 N CP(K)

Printed in Japan

1998

12 3 4 5 6 7...12

中文翻译

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与2SC5454-FB相关器件

型号	品牌	获取价格	描述	数据表
2SC5454-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD
2SC5455	RENESAS	获取价格	NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD
2SC5455	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD
2SC5455(NE67839)	NEC	获取价格	Discrete
2SC5455FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD P
2SC5455FB	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-4
2SC5455-FB	NEC	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-4
2SC5455-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD P
2SC5455-T1-A	RENESAS	获取价格	2SC5455-T1-A
2SC5457	TYSEMI	获取价格	High-speed switching High collector to base voltage VCBO transfer ratio hFE