Datasheet > 2SC5439_06

2SC5439_06

更新时间： 2024-02-27 00:48:46

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
4页	141K
描述
Silicon NPN Triple Diffused Type Switching Regulator Applications

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2SC5439_06 数据手册

2SC5439

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5439

Switching Regulator Applications

Unit: mm

High-Voltage Switching Applications

DC-DC Converter Applications

Inverter Lighting Applications

•

Excellent switching times: t = 0.2 μs (typ.), t = 0.15 μs (typ.)

High collector breakdown voltage: V

= 450 V

CEO

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

1000

Collector-emitter voltage

Emitter-base voltage

450

Collector current

Base current

Pulse

JEDEC

JEITA

―

2.0

SC-67

2-10R1A

Ta = 25°C

Tc = 25°C

Collector power

dissipation

TOSHIBA

Weight: 1.7 g (typ.)

Junction temperature

150

°C

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-10

12 3 4

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