Datasheet > 2SC544MU

2SC544MU

更新时间： 2024-11-21 14:53:27

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	272K
描述
功率三极管

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2SC544MU 数据手册

2SC544MU

NPN Silicon Epitaxial Planar Power Transistor

Features

• Low saturation voltage

• High speed switching

Applications

• Driver

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

1.5

Peak Collector Current, Pulsed (tp = 10 ms)

I_CM

0.5 ¹⁾

2 ²⁾

Power Dissipation

P_tot

Junction Temperature

T_j

150

℃

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Unit

Max.

250 ¹⁾

Thermal Resistance - Junction to Ambient

℃/W

62.5 ²⁾

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

²⁾Mounted on a ceramic board. (40 * 40 * 0.7mm)

1 / 5

Dated: 08/06/2023 Rev: 02

12 3 4 5

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