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2SC5437-T1-A PDF预览

2SC5437-T1-A

更新时间: 2024-11-20 14:46:23
品牌 Logo 应用领域
日电电子 - NEC 放大器ISM频段光电二极管晶体管
页数 文件大小 规格书
11页 60K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3

2SC5437-T1-A 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.12
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
基于收集器的最大容量:0.8 pF集电极-发射极最大电压:6 V
配置:SINGLE最高频带:L BAND
JESD-30 代码:R-PDSO-F3JESD-609代码:e6
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):9500 MHz
Base Number Matches:1

2SC5437-T1-A 数据手册

 浏览型号2SC5437-T1-A的Datasheet PDF文件第2页浏览型号2SC5437-T1-A的Datasheet PDF文件第3页浏览型号2SC5437-T1-A的Datasheet PDF文件第4页浏览型号2SC5437-T1-A的Datasheet PDF文件第5页浏览型号2SC5437-T1-A的Datasheet PDF文件第6页浏览型号2SC5437-T1-A的Datasheet PDF文件第7页 
DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC5437  
NPN EPITAXIAL SILICON TRANSISTOR  
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION  
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD  
FEATURES  
Contains same chip as 2SC5195  
Flat-lead 3-pin thin-type ultra super minimold package  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC5437  
50 pcs (Non reel)  
3 kpcs/reel  
• 8 mm wide embossed taping  
• Pin 3 (collector) face the perforation side of the tape  
2SC5437-T1  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
9
6
V
2
100  
V
mA  
mW  
°C  
°C  
P
tot Note  
125  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
65 to +150  
Note Free air  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10105EJ01V0DS (1st edition)  
The mark shows major revised points.  
(Previous No. P13146EJ1V0DS00)  
Date Published February 2002 CP(K)  
Printed in Japan  
NEC Corporation 1998  
NEC Compound Semiconductor Devices 2002  

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