2SC5436

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
12页	78K
描述
NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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中文翻译

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技术参数
数据手册

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2SC5436 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
最大集电极电流 (IC)：	0.03 A	配置：	Single
最小直流电流增益 (hFE)：	90	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.09 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	7000 MHz	Base Number Matches：	1

2SC5436 数据手册

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

2SC5436

NPN EPITAXIAL SILICON TRANSISTOR

ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY

LOW-NOISE AMPLIFICATION

FEATURE

PACKAGE DIMENSIONS (in mm)

•

Ultra super mini-mold thin flat package

1.4 ± 0.05

0.8 ± 0.1

(1.4 mm × 0.8 mm × 0.59 mm: TYP.)

•

Contains same chip as 2SC5186

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

°C

Total Power Dissipation

Junction Temperature

Storage Temperature

150

PIN CONNECTIONS

1: Emitter

Tstg

–65 to +150

2: Base

3: Collector

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PARAMETER

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

SYMBOL

ICBO

TEST CONDITIONS

VCB = 5 V, IE = 0

MIN.

TYP.

MAX.

100

130

0.8

UNIT

IEBO

VEB = 1 V, IC = 0

hFE

VCE = 2 V, IC = 20 mA^{Note 1}

Reverse Transfer Capacitance

Gain Bandwidth Product (1)

Gain Bandwidth Product (2)

Insertion Power Gain (1)

Insertion Power Gain (2)

Noise Figure (1)

Cre

VCB = 2 V, IE = 0, f = 1 MHz^{Note 2}

VCE = 2 V, IC = 20 mA, f = 2 GHz

VCE = 1 V, IC = 10 mA, f = 2 GHz

VCE = 2 V, IC = 20 mA, f = 2 GHz

VCE = 1 V, IC = 10 mA, f = 2 GHz

VCE = 2 V, IC = 3 mA, f = 2 GHz

VCE = 1 V, IC = 3 mA, f = 2 GHz

0.4

14.0

12.0

10.0

9.0

GHz

fT (1)

9.0

7.0

8.5

6.0

fT (2)

|S21e|²(1)

|S21e|²(2)

NF (1)

NF (2)

1.4

2.0

Noise Figure (2)

1.4

Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 %

2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when

emitter pin is connected to the guard pin.

Because this product uses high-frequency process, avoid excessive input of static electricity, etc.

The information in this document is subject to change without notice.

Document No. P13079EJ1V0DS00 (1st edition)

Date Published February 1998 N CP(K)

Printed in Japan

1998

12 3 4 5 6 7...12

中文翻译

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与2SC5436相关器件

型号	品牌	获取价格	描述	数据表
2SC5436(NE687M03)	ETC	获取价格	Discrete
2SC5436-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUP
2SC5436-EB-A	NEC	获取价格	暂无描述
2SC5436EB-T1	NEC	获取价格	TRANSISTOR,BJT,NPN,3V V(BR)CEO,30MA I(C),SMT
2SC5436FB	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIF
2SC5436-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUP
2SC5436-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUP
2SC5436FB-T1	NEC	获取价格	TRANSISTOR,BJT,NPN,3V V(BR)CEO,30MA I(C),SMT
2SC5436FB-T1-A	NEC	获取价格	TRANSISTOR,BJT,NPN,3V V(BR)CEO,30MA I(C),SMT
2SC5436-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUP

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