Datasheet > 2SC5433-T1EB-A

2SC5433-T1EB-A

更新时间： 2024-11-24 14:46:23

品牌	Logo	应用领域
瑞萨 - RENESAS		放大器 ISM频段光电二极管晶体管
页数	文件大小	规格书
10页	56K
描述
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3

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2SC5433-T1EB-A 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5433

NPN EPITAXIAL SILICON TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES

•

Contains same chip as 2SC5007

Flat-lead 3-pin thin-type ultra super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5433

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (collector) face the perforation side of the tape

2SC5433-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

1.5

°C

tot ^Note

125

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Free air

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10101EJ01V0DS (1st edition)

The mark • shows major revised points.

(Previous No. P13077EJ1V0DS00)

Date Published February 2002 CP(K)

Printed in Japan

NEC Corporation 1998

NEC Compound Semiconductor Devices 2002

12 3 4 5 6 7...10

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与2SC5433-T1EB-A相关器件

型号	品牌	获取价格	描述	数据表
2SC5433-T1FB-A	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC5434	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5434	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC5434(NE680M03)	ETC	获取价格	Discrete
2SC5434-A	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5434-EB	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5434-EB-A	NEC	获取价格	暂无描述
2SC5434-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
2SC5434-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU
2SC5434-T1	RENESAS	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SU