5秒后页面跳转
2SC5433(NE681M03) PDF预览

2SC5433(NE681M03)

更新时间: 2024-01-02 11:40:49
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
10页 57K
描述
Discrete

2SC5433(NE681M03) 数据手册

 浏览型号2SC5433(NE681M03)的Datasheet PDF文件第2页浏览型号2SC5433(NE681M03)的Datasheet PDF文件第3页浏览型号2SC5433(NE681M03)的Datasheet PDF文件第4页浏览型号2SC5433(NE681M03)的Datasheet PDF文件第5页浏览型号2SC5433(NE681M03)的Datasheet PDF文件第6页浏览型号2SC5433(NE681M03)的Datasheet PDF文件第7页 
DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC5433  
NPN EPITAXIAL SILICON TRANSISTOR  
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION  
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD  
FEATURES  
Contains same chip as 2SC5007  
Flat-lead 3-pin thin-type ultra super minimold package  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC5433  
50 pcs (Non reel)  
3 kpcs/reel  
• 8 mm wide embossed taping  
• Pin 3 (collector) face the perforation side of the tape  
2SC5433-T1  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
20  
10  
V
1.5  
V
65  
mA  
mW  
°C  
°C  
P
tot Note  
125  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
65 to +150  
Note Free air  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10101EJ01V0DS (1st edition)  
The mark shows major revised points.  
(Previous No. P13077EJ1V0DS00)  
Date Published February 2002 CP(K)  
Printed in Japan  
NEC Corporation 1998  
NEC Compound Semiconductor Devices 2002  

与2SC5433(NE681M03)相关器件

型号 品牌 获取价格 描述 数据表
2SC5433-A RENESAS

获取价格

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC5433EB NEC

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5433EB RENESAS

获取价格

RF SMALL SIGNAL TRANSISTOR
2SC5433-EB NEC

获取价格

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC5433-EB-A NEC

获取价格

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC5433EB-A RENESAS

获取价格

TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),SMT
2SC5433EB-T1-A RENESAS

获取价格

TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),SMT
2SC5433FB RENESAS

获取价格

RF SMALL SIGNAL TRANSISTOR
2SC5433-FB-A RENESAS

获取价格

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC5433FB-A RENESAS

获取价格

TRANSISTOR,BJT,NPN,10V V(BR)CEO,65MA I(C),SMT