2SC5432

更新时间： 2024-01-05 22:49:12

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
8页	62K
描述
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

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中文翻译

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技术参数
数据手册

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2SC5432 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
最大集电极电流 (IC)：	0.1 A	配置：	Single
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.125 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	3000 MHz	Base Number Matches：	1

2SC5432 数据手册

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

2SC5432

NPN EPITAXIAL SILICON TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FEATURE

PACKAGE DIMENSIONS (inmm)

•

Ultra super mini-mold thin flat package

1.4 ± 0.05

0.8 ± 0.1

(1.4 mm × 0.8 mm × 0.59 mm: TYP.)

•

Contains same chip as 2SC5006

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

100

°C

Total Power Dissipation

Junction Temperature

Storage Temperature

125

150

PIN CONNECTIONS

1: Emitter

Tstg

–65 to +150

2: Base

3: Collector

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PARAMETER

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

SYMBOL

ICBO

TEST CONDITIONS

VCB = 10 V, IE = 0

MIN.

TYP.

MAX.

1000

145

UNIT

IEBO

VEB = 1 V, IC = 0

hFE

VCE = 3 V, IC = 7 mA^{Note 1}

VCE = 3 V, IC = 7 mA, f = 1 GHz

VCB = 3 V, IE = 0, f = 1 MHz^{Note 2}

VCE = 3 V, IC = 7 mA, f = 1 GHz

Gain Bandwidth Product

Reverse Transfer Capacitance

Insertion Power Gain

Noise Figure

3.0

4.5

0.7

GHz

Cre

1.5

2.5

|S21e|²

7.0

10.0

1.4

Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 %

2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when

emitter pin is connected to the guard pin.

Because this product uses high-frequency process, avoid excessive input of static electricity, etc.

The information in this document is subject to change without notice.

Document No. P13076EJ1V0DS00 (1st edition)

Date Published February 1998 N CP(K)

Printed in Japan

1998

12 3 4 5 6 7 8

中文翻译

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与2SC5432相关器件

型号	品牌	获取价格	描述	数据表
2SC5432(NE856M03)	ETC	获取价格	Discrete
2SC5432-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5432-EB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5432-EB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5432EB-A	NEC	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-416VAR
2SC5432EB-T1	NEC	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-416VAR
2SC5432EB-T1-A	NEC	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-416VAR
2SC5432-FB	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3
2SC5432-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC5432FB-T1-A	NEC	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-416VAR

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