2SC5419

更新时间： 2024-01-08 07:43:19

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	42K
描述
Silicon NPN triple diffusion planer type(For low-frequency output amplification)

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2SC5419 数据手册

Transistor

2SC5419

Silicon NPN triple diffusion planer type

For low-frequency output amplification

Unit: mm

2.5±0.1

1.05

±0.05

6.9±0.1

4.0

(1.45)

0.8

0.7

Features

High collector to emitter voltage V_CEO

■

●

High transition frequency f_T.

Allowing supply with the radial taping.

0.65 max.

0.45⁺–0⁰.^.0¹5

Absolute Maximum Ratings (Ta=25˚C)

■

2.5±0.5 2.5±0.5

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

300

100

Note: In addition to the

lead type shown in

1:Emitter

2:Collector

the upper figure, the 3:Base

I_C

type as shown in

the lower figure is

also available.

MT2 Type Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

1.0

T_j

150

˚C

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

1.2±0.1

0.65

max.

0.1

0.45_–0.05

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CEO

Conditions

V_CE= 120V, I_B= 0

min

typ

max

Unit

µA

Collector cutoff current

Collector to emitter voltage

Emitter to base voltage

V_CEO

V_EBO

I_C= 100µA, I_B= 0

300

I_E= 1µA, I_C= 0

Forward current transfer ratio

h_FE

V_CE= 10V, I_C= 5mA

220

1.2

Collector to emitter saturation voltage V_CE(sat)

I_C= 50mA, I_B= 5mA

V_CB= 10V, I_E= –10mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

MHz

Transition frequency

f_T

Collector output capacitance

C_ob

Rank classification

Rank

h_FE

30 ~ 100

60 ~ 150

100 ~ 220

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