Datasheet > 2SC5413

2SC5413

更新时间： 2022-01-19 19:55:00

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2SC5413 数据手册

Power Transistors

2SC5413

Silicon NPN triple diffusion mesa type

For horizontal deflection output

Unit: mm

φ 3.3±0.2

5.0±0.3

20.0±0.5

3.0

Features

■

●

High breakdown voltage, and high reliability through the use of a

glass passivation layer

●

High-speed switching

●

1.5

Wide area of safe operation (ASO)

1.5

2.0±0.3

Absolute Maximum Ratings (T =25˚C)

■

2.7±0.3

3.0±0.3

Parameter

Symbol

V_CBO

V_CES

V_CEO

V_EBO

I_CP

Ratings

Unit

1.0±0.2

0.6±0.2

Collector to base voltage

1700

5.45±0.3

Collector to emitter voltage

10.9±0.5

600

Emitter to base voltage

Peak collector current

Collector current

1:Base

2:Collector

3:Emitter

I_C

TOP–3L Package

Base current

I_B

Collector power T_C=25°C

200

P_C

dissipation

Ta=25°C

3.5

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

_CB= 1000V, I_E= 0

Collector cutoff current

V_CB= 1700V, I_E= 0

V_EB= 5V, I_C= 0

µA

Emitter cutoff current

I_EBO

h_FE

Forward current transfer ratio

V_CE= 5V, I_C= 10A

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 10A, I_B= 2.8A

V_CE= 10V, I_C= 0.1A, f = 0.5MHz

1.5

Transition frequency

Storage time

f_T

t_stg

t_f

MHz

µs

4.0

0.3

I_C= 12A, I_B1= 2.4A, I_B2= –4.8A

Fall time

µs

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