Datasheet > 2SC5408

2SC5408

更新时间： 2022-12-12 19:46:42

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管微波
页数	文件大小	规格书
8页	53K
描述
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

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中文翻译

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数据手册

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2SC5408 数据手册

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

2SC5408

NPN EPITAXIAL SILICON TRANSISTOR

FOR MICROWAVE HIGH-GAIN AMPLIFICATION

FEATURE

PACKAGE DIMENSIONS (in mm)

•

High fT

17 GHz TYP.

2.1±0.1

•

High gain

1.25±0.1

|S^21e|²= 15.5 dB TYP.

@f = 2 GHz, V^CE= 2 V, IC = 7 mA

NF = 1.1 dB, @f = 2 GHz V^CE= 2 V, IC = 1 mA

6-pin Small Mini Mold Package

•

ORDERING INFORMATION

PART NUMBER

2SC5408-T1

QUANTITY

3 kpcs/reel

PACKING STYLE

8-mm wide emboss taping, 6-pin

(collector) feed hole direction

Remark To order evaluation samples, consult your NEC sales person-

nel (supported in 50-pcs units).

ABSOLUTE MAXIMUM RATINGS

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

°C

Total Power Dissipation

Junction Temperature

Storage Temperature

150

Tstg

–65 to +150

Because this product uses high-frequency process, avoid excessive input of static electricity, etc.

Document No. P12095EJ1V0DS00 (1st edition)

Date Published April 1997 N

Printed in Japan

1997

12 3 4 5 6 7 8

中文翻译

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