Datasheet > 2SC5408

2SC5408

更新时间： 2022-12-12 19:46:42

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管微波
页数	文件大小	规格书
8页	53K
描述
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

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2SC5408 数据手册

2SC5408

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

PARAMETER

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

SYMBOL

ICBO

TEST CONDITIONS

VCB = 5 V, IE = 0

MIN.

TYP.

MAX.

0.1

UNIT

µA

IEBO

VEB = 1 V, IC = 0

0.1

µA

hFE

VCE = 2 V, IC = 7 mA ^{Note 1}

140

Gain Bandwidth Product

Feed-back Capacitance

Insertion Power Gain

Noise Figure

VCE = 2 V, IC = 7 mA, f = 2.0 GHz

VCB = 2 V, IE = 0, f = 1 MHz ^{Note 2}

VCE = 2 V, IC = 7 mA, f = 2.0 GHz

VCE = 2 V, IC = 1 mA, f = 2.0 GHz

0.1

GHz

Cre

0.15

1.8

|S21e|²

15.5

1.1

Rank

Marking

T1E

70 to 40

hFE

Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 %, pulsed

2. Measured with three-pin bridge, with emitter pin connected to the bridge guard.

TYPICAL CHARACTERISTICS (TA = 25 °C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

COLLECTOR CURRENT

vs. BASE TO EMITTER VOLTAGE

VCE = 2 V

200

100

30 mW

100

150

0.5

1.0

- Ambient Temperature - °C

VBE - Base to Emitter Voltage - V

DC CURRENT GAIN vs.

COLLECTOR CURRENT

vs. COLLECTOR TO EMITTER VOLTAGE

500

200

200 µA

180 µA

160 µA

VCE = 2 V

100

140

120 µA

100 µA

80 µA

VCE = 1 V

60 µA

= 20 µA

1.0

2.0

3.0

100

- Collector Current - mA

VCE - Collector to Emitter Voltage - V

123 4 5 6 7 8

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2SC5408-T1	NEC	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION	获取价格
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