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2SC5408-T1 PDF预览

2SC5408-T1

更新时间: 2024-02-02 00:06:34
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管微波光电二极管放大器
页数 文件大小 规格书
8页 53K
描述
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

2SC5408-T1 技术参数

生命周期:Obsolete包装说明:MINIMOLD PACKAGE-6
Reach Compliance Code:unknown风险等级:5.84
其他特性:LOW NOISE最大集电极电流 (IC):0.01 A
基于收集器的最大容量:0.15 pF集电极-发射极最大电压:3 V
配置:SINGLEJESD-30 代码:R-PDSO-G6
元件数量:1端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):17000 MHz

2SC5408-T1 数据手册

 浏览型号2SC5408-T1的Datasheet PDF文件第2页浏览型号2SC5408-T1的Datasheet PDF文件第3页浏览型号2SC5408-T1的Datasheet PDF文件第4页浏览型号2SC5408-T1的Datasheet PDF文件第5页浏览型号2SC5408-T1的Datasheet PDF文件第6页浏览型号2SC5408-T1的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
SILICON TRANSISTOR  
2SC5408  
NPN EPITAXIAL SILICON TRANSISTOR  
FOR MICROWAVE HIGH-GAIN AMPLIFICATION  
FEATURE  
PACKAGE DIMENSIONS (in mm)  
High fT  
17 GHz TYP.  
2.1±0.1  
High gain  
1.25±0.1  
|S21e|2 = 15.5 dB TYP.  
@f = 2 GHz, VCE = 2 V, IC = 7 mA  
NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA  
6-pin Small Mini Mold Package  
ORDERING INFORMATION  
PART NUMBER  
2SC5408-T1  
QUANTITY  
3 kpcs/reel  
PACKING STYLE  
8-mm wide emboss taping, 6-pin  
(collector) feed hole direction  
Remark To order evaluation samples, consult your NEC sales person-  
nel (supported in 50-pcs units).  
ABSOLUTE MAXIMUM RATINGS  
PIN CONNECTIONS  
E: Emitter  
C: Collector  
B: Base  
PARAMETER  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
5
3
V
2
V
10  
30  
mA  
mW  
°C  
°C  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
Tj  
150  
Tstg  
–65 to +150  
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.  
Document No. P12095EJ1V0DS00 (1st edition)  
Date Published April 1997 N  
Printed in Japan  
1997  
©

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