Datasheet > 2SC5408

2SC5408

更新时间： 2022-12-12 19:46:42

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管微波
页数	文件大小	规格书
8页	53K
描述
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

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2SC5408 数据手册

2SC5408

vs. I

characteristics

|S^21e|²vs. I

characteristics

CE = 2 V

f = 2 GHz

- Collector Current - mA

100

- Collector Current - mA

100

NF vs. I characteristics

re vs. VCB

0.3

0.2

0.1

f = 1 MHz

CE = 2 V

f = 2 GHz

- Collector Current - mA

100

VCB - Collector to Base Voltage - V

|S21e|²vs. f characteristics

VCE = 2 V

= 7 mA

= 1 mA

0.1

0.5

1.0

2.0

2.6

f - Frequency - GHz

1 234 5 6 7 8

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型号	品牌	描述	获取价格	数据表
2SC5408-T1	NEC	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION	获取价格
2SC5408-T1FB	NEC	RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC,	获取价格
2SC5409	NEC	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION	获取价格
2SC5409-T1	NEC	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION	获取价格
2SC5409-T1FB	NEC	暂无描述	获取价格
2SC5410	ETC		获取价格