生命周期: | Obsolete | 包装说明: | MINIMOLD PACKAGE-4 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.01 A | 基于收集器的最大容量: | 0.5 pF |
集电极-发射极最大电压: | 3 V | 配置: | SINGLE |
最高频带: | L BAND | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 13500 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5178R-T2 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD | |
2SC5178R-T2 | RENESAS |
获取价格 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-4 | |
2SC5178T1 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 10MA I(C) | SOT-143R | |
2SC5178-T1 | NEC |
获取价格 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIF | |
2SC5178-T1FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD, | |
2SC5178-T2 | NEC |
获取价格 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIF | |
2SC5178-T2FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, | |
2SC5179 | NEC |
获取价格 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIF | |
2SC5179-FB | NEC |
获取价格 |
暂无描述 | |
2SC5179T1 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SC-70 |