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2SC5178R-T1 PDF预览

2SC5178R-T1

更新时间: 2024-11-20 14:46:23
品牌 Logo 应用领域
日电电子 - NEC 放大器光电二极管晶体管
页数 文件大小 规格书
8页 80K
描述
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD PACKAGE-4

2SC5178R-T1 技术参数

生命周期:Obsolete包装说明:MINIMOLD PACKAGE-4
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.01 A基于收集器的最大容量:0.5 pF
集电极-发射极最大电压:3 V配置:SINGLE
最高频带:L BANDJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):13500 MHzBase Number Matches:1

2SC5178R-T1 数据手册

 浏览型号2SC5178R-T1的Datasheet PDF文件第2页浏览型号2SC5178R-T1的Datasheet PDF文件第3页浏览型号2SC5178R-T1的Datasheet PDF文件第4页浏览型号2SC5178R-T1的Datasheet PDF文件第5页浏览型号2SC5178R-T1的Datasheet PDF文件第6页浏览型号2SC5178R-T1的Datasheet PDF文件第7页 
DATA SHEET  
SILICON TRANSISTOR  
2SC5178R  
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE  
FOR LOW-NOISE MICROWAVE AMPLIFICATION  
FEATURES  
PACKAGE DRAWINGS  
(Units: mm)  
Low current consumption and high gain  
2
| S21 | = 11.5 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz  
2.8+00..32  
2
| S21 | = 10.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz  
1.5+00..12  
4-pin Mini-Mold package  
SOT-143 style (Pins for overseas use are assigned to the 2SC5178.)  
ORDERING INFORMATION  
PART NUMBER  
2SC5178R-T1  
QUANTITY  
ARRANGEMENT  
3000 units/reel  
Embossed tape, 8 mm wide, pins  
No. 3 (emitter) and No. 4 (base)  
facing the perforations  
5°  
5°  
5°  
5°  
2SC5178R-T2  
3000 units/reel  
Embossed tape, 8 mm wide, pins  
No. 1 (emitter) and No. 2 (collector)  
facing the perforations  
Remark Contact your NEC sales representatives to order samples for  
evaluation (available in batches of 50).  
Electrode assignment  
1. Emitter  
2. Collector  
3. Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
PARAMETER  
Collector-to-base voltage  
Collector-to-emitter voltage  
Emitter-to-base voltage  
Collector current  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
4. Base  
5
3
V
2
V
10  
30  
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
Tj  
150  
Tstg  
–65 to +150  
°C  
This transistor uses high-frequency technology. Be careful not to allow excessive  
current to flow through the transistor, including static electricity.  
DocumentNo. TC-2519  
(O. D. No. TC-8075)  
Date Published April 1995 P  
Printed in Japan  
1995  
©

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