2SC5181

更新时间： 2024-01-19 18:39:46

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管微波
页数	文件大小	规格书
8页	54K
描述
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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中文翻译

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数据手册

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2SC5181 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5181

NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES

•

Low current consumption and high gain

PACKAGE DIMENSIONS

(Units: mm)

1.6 ± 0.1

|S^21e|²= 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz

|S21e|²= 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz

Ultra Super Mini-Mold package

•

0.8 ± 0.1

ORDERING INFORMATION

PART

QUANTITY

NUMBER

ARRANGEMENT

2SC5181

50 units/box

Embossed tape, 8 mm wide, pin No. 3

(collector) facing the perforation

2SC5181-T1

3 000 units/reel

Contact your NEC sales representatives to order samples for

evaluation (available in batches of 50).

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Collector to Base Voltage

VCBO

PIN CONNECTIONS

Collector to Emitter Voltage VCEO

1. Emitter

2. Base

3. Collector

Emitter to Base Voltage

Collector Current

VEBO

I^C

°C

Total Power Dissipation

Junction Temperature

Storage Temperature

150

T^stg

–65 to +150

Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Document No. P12105EJ2V0DS00 (2nd edition)

(Previous No. TC-2478)

Date Published November 1996 N

Printed in Japan

1994

12 3 4 5 6 7 8

中文翻译

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