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2SC5181 PDF预览

2SC5181

更新时间: 2024-11-17 22:40:03
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管微波
页数 文件大小 规格书
8页 54K
描述
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

2SC5181 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SC5181  
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE  
FOR LOW-NOISE MICROWAVE AMPLIFICATION  
FEATURES  
Low current consumption and high gain  
PACKAGE DIMENSIONS  
(Units: mm)  
1.6 ± 0.1  
|S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz  
|S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz  
Ultra Super Mini-Mold package  
0.8 ± 0.1  
2
ORDERING INFORMATION  
PART  
QUANTITY  
NUMBER  
ARRANGEMENT  
3
1
2SC5181  
50 units/box  
Embossed tape, 8 mm wide, pin No. 3  
(collector) facing the perforation  
2SC5181-T1  
3 000 units/reel  
*
Contact your NEC sales representatives to order samples for  
evaluation (available in batches of 50).  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Collector to Base Voltage  
VCBO  
5
V
V
PIN CONNECTIONS  
Collector to Emitter Voltage VCEO  
3
1. Emitter  
2. Base  
3. Collector  
Emitter to Base Voltage  
Collector Current  
VEBO  
IC  
2
V
10  
30  
mA  
mW  
°C  
°C  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
Tj  
150  
Tstg  
–65 to +150  
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.  
Document No. P12105EJ2V0DS00 (2nd edition)  
(Previous No. TC-2478)  
Date Published November 1996 N  
Printed in Japan  
1994  
©

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