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2SC5183-T1

更新时间： 2024-11-20 22:14:47

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管微波光电二极管放大器
页数	文件大小	规格书
12页	62K
描述
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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2SC5183-T1 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5183

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD

PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES

PACKAGE DIMENSIONS

•

Low Noise

(Units: mm)

NF = 1.3 dB ^TYP.@ VCE = 2 V, IC = 3 mA, f = 2 GHz

NF = 1.3 dB ^TYP.@ VCE = 1 V, IC = 3 mA, f = 2 GHz

4-pin Mini-Mold package

+0.2

2.8

–0.3

+0.2

1.5

–0.1

EIAJ: SC-61

ORDERING INFORMATION

PART

QUANTITY

NUMBER

ARRANGEMENT

2SC5183-T1

Embossed tape, 8 mm wide,

5˚

Pin No. 3 (base) and No. 4 (emitter)

facing the perforations

3 000 units/reel

2SC5183-T2

Embossed tape, 8 mm wide,

Pins No. 1 (collector) and No. 2

(emitter) facing the perforations

PIN CONNECTIONS

* Contact your NEC sales representatives to order samples for

1. Collector

2. Emitter

3. Base

evaluation (available in batches of 50).

4. Emitter

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

VCEO

VEBO

I^C

˚C

Total Power Dissipation

Junction Temperature

Storage Temperature

150

T^stg

–65 to +150

˚C

Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Document No. P12107EJ2V0DS00 (2nd edition)

(Previous No. TC-2480)

Date Published November 1996 N

Printed in Japan

1994

12 3 4 5 6 7...12

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与2SC5183-T1相关器件

型号	品牌	获取价格	描述	数据表
2SC5183-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD,
2SC5183-T2	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIF
2SC5183-T2FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC,
2SC5184	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIF
2SC5184-FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, SUPER MIN
2SC5184T1	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 3V V(BR)CEO \| 30MA I(C) \| SOT-323
2SC5184-T1	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIF
2SC5184-T1	RENESAS	获取价格	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD, SC-70, 3 PIN
2SC5184-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC,
2SC5184-T2	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIF