型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC5186-T1 | NEC |
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NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE | |
2SC5186-T1FB | NEC |
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暂无描述 | |
2SC5186-T1FB-A | NEC |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, ULTRA SUP | |
2SC5187 | ETC |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1.5A I(C) | SOT-89 | |
2SC5188 | ETC |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | SOT-89 | |
2SC5189 | ETC |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | SOT-89 | |
2SC5190 | PANASONIC |
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Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification) | |
2SC5191 | NEC |
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MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | |
2SC5191(NE68833) | NEC |
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Discrete | |
2SC5191-FB | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD, |