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2SC5186-FB-A PDF预览

2SC5186-FB-A

更新时间: 2024-11-25 13:01:15
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日电电子 - NEC 晶体小信号双极晶体管射频小信号双极晶体管微波光电二极管
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12页 60K
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2SC5186-FB-A 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SC5186  
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE  
FOR LOW-NOISE MICROWAVE AMPLIFICATION  
FEATURES  
Low Noise  
PACKAGE DIMENSIONS  
(Units: mm)  
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz  
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz  
Ultra Super Mini-Mold package  
1.6 ± 0.1  
0.8 ± 0.1  
2
ORDERING INFORMATION  
PART  
3
QUANTITY  
NUMBER  
ARRANGEMENT  
1
2SC5186  
50 units/box  
Embossed tape, 8 mm wide,  
Pin 3 (Collector) facing the perforations.  
2SC5186-T1  
3 000 units/reel  
* Contact your NEC sales representatives to order samples for  
evaluation (available in batches of 50).  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
5
V
V
3
PIN CONNECTIONS  
2
V
1. Emitter  
2. Base  
3. Collector  
30  
90  
mA  
mW  
˚C  
˚C  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
Tj  
150  
Tstg  
–65 to +150  
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.  
Document No. P12110EJ2V0DS00 (2nd edition)  
(Previous No. TC-2483)  
Date Published November 1996 N  
Printed in Japan  
1994  
©

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