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2SC5182-T1

更新时间： 2024-11-20 22:12:43

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管微波
页数	文件大小	规格书
12页	58K
描述
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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中文翻译

获取价格

数据手册

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2SC5182-T1 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5182

NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES

PACKAGE DIMENSIONS

•

Low noise

(Units: mm)

NF = 1.3 dB ^TYP.@ VCE = 2 V, IC = 3 mA, f = 2 GHz

NF = 1.3 dB ^TYP.@ VCE = 1 V, IC = 3 mA, f = 2 GHz

Mini-Mold package

2.8±0.2

1.5

0.65⁺–⁰0^..¹15

EIAJ: SC-59

ORDERING INFORMATION

PART

QUANTITY

NUMBER

ARRANGEMENT

2SC5182-T1

Embossed tape, 8 mm wide,

Pin No. 3 (Collector)

facing the perforations

3 000 units/reel

2SC5182-T2

Marking

Embossed tape, 8 mm wide,

Pins No. 1 (Emitter) and No. 2 (Base)

facing the perforations

Contact your NEC sales representative to order samples for evaluation

(available in batches of 50).

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PIN CONNECTIONS

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

VCEO

VEBO

I^C

1. Emitter

2. Base

3. Collector

˚C

Total Power Dissipation

Junction Temperature

Storage Temperature

150

T^stg

–65 to +150

˚C

Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Document No. P12106EJ2V0DS00 (2nd edition)

(Previous No. TC-2479)

Date Published November 1996 N

Printed in Japan

1994

12 3 4 5 6 7...12

中文翻译

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