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2SC5180(NE68618) PDF预览

2SC5180(NE68618)

更新时间: 2024-11-17 23:20:23
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Discrete

2SC5180(NE68618) 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
2SC5180  
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE  
FOR LOW-NOISE MICROWAVE AMPLIFICATION  
FEATURES  
PACKAGE DIMENSIONS  
Low current consumption and high gain  
S21e 2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz  
S21e 2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz  
Supper Mini-Mold package  
(Units : mm)  
2.1 ± 0.2  
1.25 ± 0.1  
ORDERING INFORMATION  
PART  
NUMBER  
QUANTITY  
ARRANGEMENT  
Embossed tape, 8 mm wide, pins No. 3  
(base) and No. 4 (emitter) facing the  
perforations  
2SC5180–T1  
3 000 units/reel  
Embossed tape, 8 mm wide, pins No. 1  
(collector) and No. 2 (emitter) facing the  
perforations  
2SC5180–T2  
* Contact your NEC sales representatives to order samples for evaluation (available  
in batches of 50).  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
5
V
V
3
2
V
PIN CONNECTIONS  
10  
30  
mA  
mW  
°C  
°C  
1. Collector  
2. Emitter  
3. Base  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
Tj  
150  
4. Emitter  
Tstg  
–65 to +150  
Caution;  
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.  
Document No. P12104EJ2V0DS00 (2nd edition)  
(Previous No. TC-2477)  
Date Published December 1996 N  
Printed in Japan  
1994  
©

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