Datasheet > 2SC5180-T1FB

2SC5180-T1FB

更新时间： 2024-02-02 15:19:52

品牌	Logo	应用领域
日电电子 - NEC		放大器光电二极管晶体管
页数	文件大小	规格书
7页	57K
描述
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC, SUPERMINI-4

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技术参数
数据手册

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2SC5180-T1FB 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	PLASTIC, SUPERMINI-4	Reach Compliance Code：	compliant
风险等级：	5.75	其他特性：	LOW NOISE
最大集电极电流 (IC)：	0.01 A	基于收集器的最大容量：	0.5 pF
集电极-发射极最大电压：	3 V	配置：	SINGLE
最高频带：	L BAND	JESD-30 代码：	R-PDSO-G4
JESD-609代码：	e0	元件数量：	1
端子数量：	4	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	15500 MHz	Base Number Matches：	1

2SC5180-T1FB 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5180

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

4-PIN SUPER MINIMOLD

FEATURES

•

Low current consumption and high gain

S^21e²= 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz

S^21e²= 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

4-pin super minimold Package

•

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5180

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape

2SC5180-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

150

−65 to +150

Tstg

Note Free air

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10517EJ01V0DS (1st edition)

(Previous No. P12104EJ2V0DS00)

Date Published August 2004 CP(K)

The mark shows major revised points.

NEC Compound Semiconductor Devices, Ltd. 1994 , 2004

Printed in Japan

12 3 4 5 6 7

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