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2SC5179-T1FB PDF预览

2SC5179-T1FB

更新时间: 2024-11-18 13:04:19
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管微波
页数 文件大小 规格书
12页 59K
描述
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD, SC-70, 3 PIN

2SC5179-T1FB 技术参数

生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
其他特性:LOW NOISE最大集电极电流 (IC):0.01 A
基于收集器的最大容量:0.6 pF集电极-发射极最大电压:3 V
配置:SINGLE最小直流电流增益 (hFE):70
最高频带:L BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):13000 MHz
Base Number Matches:1

2SC5179-T1FB 数据手册

 浏览型号2SC5179-T1FB的Datasheet PDF文件第2页浏览型号2SC5179-T1FB的Datasheet PDF文件第3页浏览型号2SC5179-T1FB的Datasheet PDF文件第4页浏览型号2SC5179-T1FB的Datasheet PDF文件第5页浏览型号2SC5179-T1FB的Datasheet PDF文件第6页浏览型号2SC5179-T1FB的Datasheet PDF文件第7页 
DATA SHEET  
SILICON TRANSISTOR  
2SC5179  
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE  
FOR LOW-NOISE MICROWAVE AMPLIFICATION  
FEATURES  
Low current consumption and high gain  
|S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz  
|S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz  
Small Mini-Mold package  
PACKAGE DIMENSIONS  
(Units: mm)  
2.1±0.1  
1.25±0.1  
EIAJ: SC-70  
ORDERING INFORMATION  
2
PART  
QUANTITY  
NUMBER  
ARRANGEMENT  
3
1
2SC5179-T1  
Embossed tape, 8 mm wide, pin  
No. 3 (Collector) facing  
the perforations  
3000 units/reel  
2SC5179-T2  
Marking  
Embossed tape, 8 mm wide, pins  
No. 1 (Emitter) and No. 2 (Base)  
facing the perforations  
*
Contact your NEC sales representatives to order samples for  
evaluation (available in batches of 50).  
PIN CONNECTIONS  
1. Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
5
V
V
2. Base  
3
3. Collector  
2
V
10  
30  
mA  
mW  
°C  
°C  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
Tj  
150  
Tstg  
–65 to +150  
CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.  
Document No. P12103EJ2V0DS00 (2nd edition)  
(Previous No. TC-2476)  
Date Published November 1996 N  
Printed in Japan  
1994  
©

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