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2SC5179-T1

更新时间： 2024-11-17 22:52:43

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管微波
页数	文件大小	规格书
12页	59K
描述
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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中文翻译

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数据手册

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2SC5179-T1 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5179

NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES

•

Low current consumption and high gain

|S^21e|²= 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz

|S21e|²= 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

Small Mini-Mold package

PACKAGE DIMENSIONS

(Units: mm)

2.1±0.1

•

1.25±0.1

EIAJ: SC-70

ORDERING INFORMATION

PART

QUANTITY

NUMBER

ARRANGEMENT

2SC5179-T1

Embossed tape, 8 mm wide, pin

No. 3 (Collector) facing

the perforations

3000 units/reel

2SC5179-T2

Marking

Embossed tape, 8 mm wide, pins

No. 1 (Emitter) and No. 2 (Base)

facing the perforations

Contact your NEC sales representatives to order samples for

evaluation (available in batches of 50).

PIN CONNECTIONS

1. Emitter

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

VCEO

V^EBO

2. Base

3. Collector

°C

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

Tstg

–65 to +150

CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Document No. P12103EJ2V0DS00 (2nd edition)

(Previous No. TC-2476)

Date Published November 1996 N

Printed in Japan

1994

12 3 4 5 6 7...12

中文翻译

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