Datasheet > 2SC5178-T1

2SC5178-T1

更新时间： 2024-11-17 22:52:43

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管微波光电二极管放大器
页数	文件大小	规格书
12页	83K
描述
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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2SC5178-T1 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC5178

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES

•

Low current consumption and high gain

|S^21e|²= 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz

|S21e|²= 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

4-pin Mini-Mold package

PACKAGE DIMENSIONS

(Units: mm)

2.8⁺^–0⁰^.^.³²

1.5⁺^–0⁰^.^.¹²

•

EIAJ: SC-61

ORDERING INFORMATION

PART

QUANTITY

NUMBER

ARRANGEMENT

2SC5178-T1

3000 units/reel

Embossed tape, 8 mm wide, pins

No. 3 (base) and No. 4 (emitter) facing

the perforations

5°

2SC5178-T2

3000 units/reel

Embossed tape, 8 mm wide, pins

No. 1 (collector) and No. 2 (emitter)

facing the perforations

Contact your NEC sales representatives to order samples for

evaluation (available in batches of 50).

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

4. Emitter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

VCBO

VCEO

V^EBO

°C

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

Tstg

–65 to +150

CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Document No. P12102EJ2V0DS00 (2nd edition)

(Previous No. TC-2475)

Date Published November 1996 N

Printed in Japan

1994

12 3 4 5 6 7...12

中文翻译

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2SC5179-T1FB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD,
2SC5179-T2	NEC	获取价格	NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIF
2SC5179-T2FB	NEC	获取价格	暂无描述