5秒后页面跳转
2SC5178-T2 PDF预览

2SC5178-T2

更新时间: 2024-02-17 03:53:57
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管微波光电二极管放大器
页数 文件大小 规格书
12页 83K
描述
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

2SC5178-T2 技术参数

生命周期:Obsolete零件包装代码:SC-61
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
其他特性:LOW NOISE外壳连接:COLLECTOR
最大集电极电流 (IC):0.01 A基于收集器的最大容量:0.5 pF
集电极-发射极最大电压:3 V配置:SINGLE
最小直流电流增益 (hFE):70最高频带:L BAND
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):13500 MHzBase Number Matches:1

2SC5178-T2 数据手册

 浏览型号2SC5178-T2的Datasheet PDF文件第2页浏览型号2SC5178-T2的Datasheet PDF文件第3页浏览型号2SC5178-T2的Datasheet PDF文件第4页浏览型号2SC5178-T2的Datasheet PDF文件第5页浏览型号2SC5178-T2的Datasheet PDF文件第6页浏览型号2SC5178-T2的Datasheet PDF文件第7页 
DATA SHEET  
SILICON TRANSISTOR  
2SC5178  
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE  
FOR LOW-NOISE MICROWAVE AMPLIFICATION  
FEATURES  
Low current consumption and high gain  
|S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz  
|S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz  
4-pin Mini-Mold package  
PACKAGE DIMENSIONS  
(Units: mm)  
2.8+00..32  
1.5+00..12  
EIAJ: SC-61  
ORDERING INFORMATION  
PART  
QUANTITY  
NUMBER  
ARRANGEMENT  
2SC5178-T1  
3000 units/reel  
Embossed tape, 8 mm wide, pins  
No. 3 (base) and No. 4 (emitter) facing  
the perforations  
5°  
5°  
5°  
5°  
2SC5178-T2  
3000 units/reel  
Embossed tape, 8 mm wide, pins  
No. 1 (collector) and No. 2 (emitter)  
facing the perforations  
*
Contact your NEC sales representatives to order samples for  
evaluation (available in batches of 50).  
PIN CONNECTIONS  
1. Collector  
2. Emitter  
3. Base  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
4. Emitter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
5
V
V
3
2
V
10  
30  
mA  
mW  
°C  
°C  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
PT  
Tj  
150  
Tstg  
–65 to +150  
CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.  
Document No. P12102EJ2V0DS00 (2nd edition)  
(Previous No. TC-2475)  
Date Published November 1996 N  
Printed in Japan  
1994  
©

与2SC5178-T2相关器件

型号 品牌 描述 获取价格 数据表
2SC5178-T2FB NEC RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, PLASTIC,

获取价格

2SC5179 NEC NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIF

获取价格

2SC5179-FB NEC 暂无描述

获取价格

2SC5179T1 ETC TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SC-70

获取价格

2SC5179-T1 NEC NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIF

获取价格

2SC5179-T1FB NEC RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD,

获取价格