Datasheet > 2SC4223L

2SC4223L

更新时间： 2024-11-27 20:22:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	38K
描述
TRANSISTOR,BJT,NPN,800V V(BR)CEO,1.5A I(C),TO-221VAR

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2SC4223L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.6
Is Samacsys：	N	最大集电极电流 (IC)：	1.5 A
配置：	Single	最小直流电流增益 (hFE)：	15
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	40 W	子类别：	Other Transistors
表面贴装：	NO	标称过渡频率 (fT)：	15 MHz
Base Number Matches：	1

2SC4223L 数据手册

Ordering number:ENN2762A

NPN Triple Diffused Planar Silicon Transistor

2SC4223

800V/1.5A Switching Regulator Applications

Features

Package Dimensions

unit:mm

· High breakdown voltage, high reliability.

· High-speed switching (t =0.1µs typ).

· Wide ASO.

· Adoption of MBIT process.

· Suitable for sets whose height is restricted.

2049C

[2SC4223]

10.2

4.5

1.3

1.2

0.8

0.4

1 : Base

2 : Collector

3 : Emitter

2.55

SANYO : TO-220MF

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

1100

800

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

1.5

PW≤300µs, duty cycle≤10%

Collector Current (Pulse)

Base Current

0.8

1.65

Ta=25˚C

Tc=25˚C

˚C

Collector Dissipation

Junction Temperature

Storage Temperature

150

˚C

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector Cutoff Current

Emitter Cutoff Current

=800V, I =0

=5V, I =0

µA

CBO

EBO

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

80504TN (PC)/D1098HA (KT)/4208MO, TS No.2762–1/4

12 3 4

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与2SC4223L相关器件

型号	品牌	获取价格	描述	数据表
2SC4223M	ONSEMI	获取价格	TRANSISTOR,BJT,NPN,800V V(BR)CEO,1.5A I(C),TO-221VAR
2SC4224	SANYO	获取价格	Switching Regulator Applications
2SC4224K	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 800V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SC4224L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 800V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SC4224M	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 800V V(BR)CEO \| 3A I(C) \| TO-221VAR
2SC4225	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
2SC4225R2	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 70MA I(C) \| SOT-323
2SC4225R3	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 70MA I(C) \| SOT-323
2SC4225-R3	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC4225-T1R2	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Sili

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