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2SC4226 PDF预览

2SC4226

更新时间: 2024-11-20 06:24:35
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管光电二极管放大器
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描述
NPN Silicon Epitaxial Transistor

2SC4226 数据手册

  
SMD Type  
Transistors  
NPN Silicon Epitaxial Transistor  
2SC4226  
Features  
Low noise and high gain.  
NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz  
High gain.  
|S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA  
1 Emitter  
2 Base  
3 Collecotr  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector to base voltage  
Symbol  
Rating  
20  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
power dissipation  
12  
V
3.0  
V
100  
mA  
mW  
PC  
150  
Junction temperature  
Storage temperature range  
Tj  
150  
Tstg  
-65 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain *  
Symbol  
Testconditons  
Min  
Typ  
Max  
1.0  
Unit  
A
ICBO  
IEBO  
hFE  
VCB = 10 V, IE = 0  
VEB = 1.0 V, IC = 0  
VCE = 3V, IC = 7 mA  
1.0  
A
40  
7
110  
9
250  
2
Insertion power gain  
Noise figure  
VCE = 3V, IC = 7 mA, f = 1 GHz  
VCE = 3 V, IC = 7 mA, f = 1 GHz  
VCB = 3 V, IE = 0 , f = 1 MHz  
VCE =3V, IC = 7 mA  
dB  
dB  
S21e  
NF  
Cre  
fT  
1.2  
0.7  
4.5  
2.5  
1.5  
Reverse transfer capacitance  
Transition frequency  
pF  
3.0  
GHz  
*. Pulse measurement: PW  
350 s, Duty Cycle  
2%.  
hFE Classification  
Marking  
Rank  
R23  
R23  
R24  
R24  
R25  
R25  
hFE  
40 80  
70 140  
125 250  
1
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