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2SC4226-R23-A PDF预览

2SC4226-R23-A

更新时间: 2024-11-21 10:06:23
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
7页 105K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SUPER MINIMOLD, SC-70, 3 PIN

2SC4226-R23-A 数据手册

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DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC4226  
NPN EPITAXIAL SILICON RF TRANSISTOR  
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION  
3-PIN SUPER MINIMOLD  
DESCRIPTION  
The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.  
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold  
package.  
FEATURES  
Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz  
High gain : S21e2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz  
3-pin super minimold package  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC4226  
50 pcs (Non reel)  
3 kpcs/reel  
• 8 mm wide embossed taping  
• Pin 3 (Collector) face the perforation side of the tape  
2SC4226-T1  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
20  
12  
V
3
100  
V
mA  
mW  
°C  
°C  
Note  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Ptot  
150  
Tj  
150  
Tstg  
65 to +150  
Note Free air  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10450EJ01V0DS (1st edition)  
(Previous No. P10368EJ3V0DS00)  
The mark  shows major revised points.  
Date Published December 2003 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 1993, 2003  

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