Datasheet > 2SC4227-R34

2SC4227-R34

更新时间： 2024-09-29 10:01:51

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
7页	105K
描述
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SUPER MINIMOLD, SC-70, 3 PIN

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2SC4227-R34 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC4227

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

3-PIN SUPER MINIMOLD

DESCRIPTION

The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.

It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold

package.

FEATURES

•

Low noise : NF = 1.4 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz

High gain : S^21e²= 12 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz

3-pin super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC4227

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Collector) face the perforation side of the tape

2SC4227-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

1.5

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

150

Tstg

−65 to +150

Note Free air

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10451EJ01V0DS (1st edition)

(Previous No. P10371EJ2V0DS00)

The mark shows major revised points.

Date Published December 2003 CP(K)

Printed in Japan



NEC Compound Semiconductor Devices 1993, 2003

12 3 4 5 6 7

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与2SC4227-R34相关器件

型号	品牌	获取价格	描述	数据表
2SC4227-R34-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4227R34-A	RENESAS	获取价格	RF POWER AMP TRANSISTOR, FT > 300 MHZ,10V V(BR)CEO,65MA I(C),SOT-323
2SC4227R34-T1-A	RENESAS	获取价格	RF POWER AMP TRANSISTOR, FT > 300 MHZ,10V V(BR)CEO,65MA I(C),SOT-323
2SC4227-R35	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4227-R35-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4227R35-A	RENESAS	获取价格	RF POWER AMP TRANSISTOR, FT > 300 MHZ,10V V(BR)CEO,65MA I(C),SOT-323
2SC4227R35-T1	RENESAS	获取价格	RF POWER AMP TRANSISTOR, FT > 300 MHZ,10V V(BR)CEO,65MA I(C),SOT-323
2SC4227R35-T1-A	RENESAS	获取价格	RF POWER AMP TRANSISTOR, FT > 300 MHZ,10V V(BR)CEO,65MA I(C),SOT-323
2SC4227-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4227-T1R33	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-3

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