5秒后页面跳转
2SC4228 PDF预览

2SC4228

更新时间: 2024-01-15 19:22:45
品牌 Logo 应用领域
日电电子 - NEC 晶体放大器小信号双极晶体管射频小信号双极晶体管光电二极管
页数 文件大小 规格书
8页 51K
描述
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

2SC4228 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SUPER MINIMOLD, SC-70, 3 PINReach Compliance Code:compliant
风险等级:5.83最大集电极电流 (IC):0.035 A
基于收集器的最大容量:0.7 pF集电极-发射极最大电压:10 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN BISMUTH端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):8000 MHz

2SC4228 数据手册

 浏览型号2SC4228的Datasheet PDF文件第2页浏览型号2SC4228的Datasheet PDF文件第3页浏览型号2SC4228的Datasheet PDF文件第4页浏览型号2SC4228的Datasheet PDF文件第5页浏览型号2SC4228的Datasheet PDF文件第6页浏览型号2SC4228的Datasheet PDF文件第7页 
DATA SHEET  
SILICON TRANSISTOR  
2SC4228  
HIGH FREQUENCY LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISTOR  
SUPER MINI MOLD  
DESCRIPTION  
PACKAGE DIMENSIONS  
The 2SC4228 is a low supply voltage transistor designed for VHF,  
UHF low noise amplifier.  
in millimeters  
It is suitable for a high density surface mount assembly since the  
transistor has been applied super mini mold package.  
This is achieved by direct nitride passivated base surface process  
(NESATTM process) which is an NEC proprietary fabrication technique.  
2.1 ± 0.1  
1.25 ± 0.1  
2
FEATURES  
3
High fT  
: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)  
: 0.3 pF TYP. (@ VCB = 3 V, IE = 0, f = 1 MHz)  
1
Low Cre  
High |S21e|2 : 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)  
Super Mini Mold Package. (EIAJ: SC-70)  
Marking  
ORDERING INFORMATION  
PART  
QUANTITY  
NUMBER  
PACKING STYLE  
2SC4228-T1  
3 kpcs/Reel.  
Embossed tape 8 mm wide.  
Pin3 (Collector) face to perforation side  
of the tape.  
2SC4228-T2  
3 kpcs/Reel.  
Embossed tape 8 mm wide.  
Pin1 (Emitter), Pin2 (Base) face to  
perforation side of the tape.  
PIN CONNECTIONS  
1. Emitter  
2. Base  
3. Collector  
*
PleasecontactwithresponsibleNECperson,ifyourequireevaluation  
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4228)  
Document No. P10372EJ2V0DS00 (2nd edition)  
(Previous No. TC-2404)  
Date Published July 1995 P  
Printed in Japan  
1993  
©

2SC4228 替代型号

型号 品牌 替代类型 描述 数据表
2SC4228 RENESAS

功能相似

NPN EPITAXIAL SILICON RF TRANSISTOR
2SC4227 RENESAS

功能相似

NPN EPITAXIAL SILICON RF TRANSISTOR

与2SC4228相关器件

型号 品牌 获取价格 描述 数据表
2SC4228(NE68030) ETC

获取价格

Discrete
2SC4228-A RENESAS

获取价格

暂无描述
2SC4228-R43 NEC

获取价格

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4228R43-T1-A RENESAS

获取价格

TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-323
2SC4228-R44 NEC

获取价格

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4228R44-T1-A RENESAS

获取价格

TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-323
2SC4228-R45 NEC

获取价格

RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Sil
2SC4228R45-A RENESAS

获取价格

TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-323
2SC4228R45-T1 RENESAS

获取价格

TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-323
2SC4228R45-T1-A RENESAS

获取价格

TRANSISTOR,BJT,NPN,10V V(BR)CEO,35MA I(C),SOT-323