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2SC4228-T1R44 PDF预览

2SC4228-T1R44

更新时间： 2024-11-16 14:39:23
品牌 Logo 应用领域
日电电子 - NEC 放大器光电二极管晶体管
页数 文件大小 规格书
7页 105K
描述
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SUPER MINIMOLD, SC-70, 3 PIN

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2SC4228-T1R44 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SC-70包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.23其他特性：LOW NOISE
最大集电极电流 (IC)：0.035 A基于收集器的最大容量：0.7 pF
集电极-发射极最大电压：10 V配置：SINGLE
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-G3
JESD-609代码：e0元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：8000 MHzBase Number Matches：1

2SC4228-T1R44 数据手册

 浏览型号2SC4228-T1R44的Datasheet PDF文件第2页浏览型号2SC4228-T1R44的Datasheet PDF文件第3页浏览型号2SC4228-T1R44的Datasheet PDF文件第4页浏览型号2SC4228-T1R44的Datasheet PDF文件第5页浏览型号2SC4228-T1R44的Datasheet PDF文件第6页浏览型号2SC4228-T1R44的Datasheet PDF文件第7页 
DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC4228  
NPN EPITAXIAL SILICON RF TRANSISTOR  
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION  
3-PIN SUPER MINIMOLD  
DESCRIPTION  
The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.  
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold  
package.  
FEATURES  
•
•
•
Low noise : NF = 1.9 dB TYP. @ VCE = 3 V, IC = 5 mA, f = 2 GHz  
High gain : S21e2 = 7.5 dB TYP. @ VCE = 3 V, IC = 5 mA, f = 2 GHz  
3-pin super minimold package  
ORDERING INFORMATION  
Part Number  
Quantity  
Supplying Form  
2SC4228  
50 pcs (Non reel)  
3 kpcs/reel  
• 8 mm wide embossed taping  
• Pin 3 (Collector) face the perforation side of the tape  
2SC4228-T1  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
20  
10  
V
1.5  
V
35  
mA  
mW  
°C  
°C  
Note  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Ptot  
150  
Tj  
150  
Tstg  
−65 to +150  
Note Free air  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10452EJ01V0DS (1st edition)  
(Previous No. P10372EJ2V0DS00)  
The mark  shows major revised points.  
Date Published December 2003 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 1993, 2003  
1234567

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