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2SC4232 PDF预览

2SC4232

更新时间: 2024-11-16 06:17:39
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 125K
描述
Silicon NPN Power Transistors

2SC4232 数据手册

 浏览型号2SC4232的Datasheet PDF文件第2页浏览型号2SC4232的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC4232  
DESCRIPTION  
·With TO-247 package  
·Switching power transistor  
·High breakdown voltage  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-247) and symbol  
3
Emitter  
Absolute maximum ratings(Tc=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
Base current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
V
1200  
Open base  
800  
V
Open collector  
7
V
2
A
ICM  
4
A
IB  
1
2
A
IBM  
Base current-Peak  
A
PD  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
70  
W
Tj  
150  
-55~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-C  
Thermal resistance junction to case  
1.7  
/W  

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