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2SC4230 PDF预览

2SC4230

更新时间: 2024-11-16 06:15:59
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 227K
描述
isc Silicon NPN Power Transistor

2SC4230 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Base Number Matches:1

2SC4230 数据手册

 浏览型号2SC4230的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2SC4230  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS)= 800V(Min)  
·Fast Switching speed  
APPLICATIONS  
·Electronic ballasts for fluorescent lighting  
·Switch mode power supplies  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
1200  
800  
V
7
V
Collector Current-Continuous  
Collector Curent-Peak  
Base Current-Continuous  
Base Current-Peak  
2
A
ICM  
4
A
IB  
1
2
A
IBM  
A
Total Power Dissipation  
@ TC=25℃  
PT  
50  
W
TJ  
Junction Temperature  
150  
Storage Temperature Range  
-55~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
2.5  
UNIT  
Thermal Resistance,Junction to Case  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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