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2SC4230 PDF预览

2SC4230

更新时间: 2024-11-15 22:52:43
品牌 Logo 应用领域
新电元 - SHINDENGEN 晶体开关晶体管
页数 文件大小 规格书
12页 392K
描述
Switching Power Transistor(2A NPN)

2SC4230 数据手册

 浏览型号2SC4230的Datasheet PDF文件第2页浏览型号2SC4230的Datasheet PDF文件第3页浏览型号2SC4230的Datasheet PDF文件第4页浏览型号2SC4230的Datasheet PDF文件第5页浏览型号2SC4230的Datasheet PDF文件第6页浏览型号2SC4230的Datasheet PDF文件第7页 
SHINDENGEN  
Switching Power Transistor  
HFX Series  
OUTLINE DIMENSIONS  
2SC4230  
Case : TO-220  
Unit : mm  
(T2V80HFX)  
2A NPN  
RATINGS  
Absolute Maximum Ratings  
Item  
Storage Temperature  
Conditions  
Symbol  
Tstg  
Tj  
VCBO  
VCEO  
VEBO  
Ratings  
-55~150  
Unit  
V
V
V
Junction Temperature  
150  
1200  
800  
7
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current DC  
Collector Current Peak  
Base Current DC  
I
2
A
C
I
4
1
CP  
I
A
B
Base Current Peak  
I
2
BP  
Total Transistor Dissipation  
M ounting Torque  
PT  
TOR  
Tc = 25℃  
50  
0.5  
W
(Recommended torque : 0.3Nm)  
Nm  
●Electrical Characteristics (Tc=25℃)  
Item  
Conditions  
Symbol  
Ratings  
M in 800  
M ax 0.1  
M ax 0.1  
M ax 0.1  
M in 8  
Unit  
V
Collector to Emitter Sustaining Voltage  
V (sus) I = 0.1A  
C
CEO  
Collector Cutoff Current  
I
At rated Voltage  
mA  
CBO  
I
CEO  
Emitter Cutoff Current  
DC Current Gain  
I
At rated Voltage  
mA  
EBO  
VCE = 5V, I = 1A  
C
hFE  
hFEL  
VCE = 5V, I = 1mA  
C
M in 7  
Collector to Emitter Saturation Voltage  
I = 1A  
C
VCE(sat)  
VBE(sat)  
θjc  
M ax 1.0  
M ax 1.5  
V
V
Base to Emitter Saturation Voltage  
Thermal Resistance  
Transition Frequency  
Turn on Time  
I = 0.2A  
B
Junction to case  
M ax 2.5 /W  
f
VCE = 10V, I = 0.2A  
C
TYP 8  
M ax 0.5  
M ax 3.5  
M ax 0.3  
M Hz  
T
I = 1A  
C
ton  
ts  
tf  
Storage Time  
I = 0.2A, I = 0.4A  
B2  
μs  
B1  
Fall Time  
RL = 250Ω, VBB2 = 4V  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  

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