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2SC4226E PDF预览

2SC4226E

更新时间: 2024-11-21 02:49:55
品牌 Logo 应用领域
时科 - SHIKUES /
页数 文件大小 规格书
3页 591K
描述
NPN SILICON RF TRANSISTOR

2SC4226E 数据手册

 浏览型号2SC4226E的Datasheet PDF文件第2页浏览型号2SC4226E的Datasheet PDF文件第3页 
2SC4226  
NPN SILICON RF TRANSISTOR  
External bipolar process, with high power gain  
Low noise characteristics. The adoption of submit-  
niature SOT- 323 package, Especially suitable for  
high density surface patch installation, mainly for  
the VHF, UHF low noise amplifier.  
SOT-3231Base  
2Emitter 3Collector  
Feature  
High gain:S21e2 TYP. Value is 11dB  
@ VCE=3VIC=7mAf=1GHz  
@ VCE=3VIC=7mAf=1GHz  
@ VCE=3VIC=7mAf=1GHz  
Low noise: NF  
fT (TYP.) :  
TYP. Value is 1.4dB  
TYP. Value is 4.5GHz  
Absolute Maximum Ratings TA=25Unless Otherwise noted  
PARAMETER  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector current  
SYMBLE  
VCBO  
VCEO  
VEBO  
IC  
MAXIMUM VALUE  
UNIT  
V
20  
12  
V
3
100  
V
mA  
mW  
Collector Power Dissipation  
Junction Temperature  
PD  
150  
Tj  
150  
Storage Temperature  
Tstg  
-65 ~ +150  
Tstg  
hFE Classification  
A
B
C
D
E
Classification  
Marking  
R24  
R25  
60~100  
90~140  
130~180  
170~250  
250~300  
hFE  
REV.08  
1 of 3  

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