Datasheet > 2SC4226A

2SC4226A

更新时间： 2024-11-25 02:50:15

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描述
NPN SILICON RF TRANSISTOR

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2SC4226A 数据手册

2SC4226

NPN SILICON RF TRANSISTOR

External bipolar process, with high power gain

Low noise characteristics. The adoption of submit-

niature SOT- 323 package, Especially suitable for

high density surface patch installation, mainly for

the VHF, UHF low noise amplifier.

SOT-323：1：Base

2：Emitter 3：Collector

Feature

High gain:︱S²¹e︱²TYP. Value is 11dB

@ VCE=3V，IC=7mA，f=1GHz

Low noise: NF

f^T(TYP.) ^:

TYP. Value is 1.4dB

TYP. Value is 4.5GHz

Absolute Maximum Ratings T^A=25℃ Unless Otherwise noted

PARAMETER

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector current

SYMBLE

VCBO

VCEO

VEBO

MAXIMUM VALUE

UNIT

100

℃

Collector Power Dissipation

Junction Temperature

150

Storage Temperature

Tstg

-65 ~ +150 ℃

Tstg

hFE Classification

Classification

Marking

R24

R25

60~100

90~140

130~180

170~250

250~300

hFE

REV.08

1 of 3

12 3

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与2SC4226A相关器件

型号	品牌	获取价格	描述	数据表
2SC4226-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4226B	SHIKUES	获取价格	NPN SILICON RF TRANSISTOR
2SC4226C	SHIKUES	获取价格	NPN SILICON RF TRANSISTOR
2SC4226D	SHIKUES	获取价格	NPN SILICON RF TRANSISTOR
2SC4226E	SHIKUES	获取价格	NPN SILICON RF TRANSISTOR
2SC4226-R23-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4226R24	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-3
2SC4226-R25	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4226-R25-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4226T1	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SOT-323