Datasheet > 2SC4226B

2SC4226B

更新时间： 2024-11-25 02:50:31

品牌	Logo	应用领域
时科 - SHIKUES		/
页数	文件大小	规格书
3页	591K
描述
NPN SILICON RF TRANSISTOR

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2SC4226B 数据手册

2SC4226

NPN SILICON RF TRANSISTOR

External bipolar process, with high power gain

Low noise characteristics. The adoption of submit-

niature SOT- 323 package, Especially suitable for

high density surface patch installation, mainly for

the VHF, UHF low noise amplifier.

SOT-323：1：Base

2：Emitter 3：Collector

Feature

High gain:︱S²¹e︱²TYP. Value is 11dB

@ VCE=3V，IC=7mA，f=1GHz

Low noise: NF

f^T(TYP.) ^:

TYP. Value is 1.4dB

TYP. Value is 4.5GHz

Absolute Maximum Ratings T^A=25℃ Unless Otherwise noted

PARAMETER

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector current

SYMBLE

VCBO

VCEO

VEBO

MAXIMUM VALUE

UNIT

100

℃

Collector Power Dissipation

Junction Temperature

150

Storage Temperature

Tstg

-65 ~ +150 ℃

Tstg

hFE Classification

Classification

Marking

R24

R25

60~100

90~140

130~180

170~250

250~300

hFE

REV.08

1 of 3

12 3

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与2SC4226B相关器件

型号	品牌	获取价格	描述	数据表
2SC4226C	SHIKUES	获取价格	NPN SILICON RF TRANSISTOR
2SC4226D	SHIKUES	获取价格	NPN SILICON RF TRANSISTOR
2SC4226E	SHIKUES	获取价格	NPN SILICON RF TRANSISTOR
2SC4226-R23-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4226R24	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, SUPER MINIMOLD PACKAGE-3
2SC4226-R25	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4226-R25-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4226T1	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SOT-323
2SC4226-T1	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC4226-T1	RENESAS	获取价格	NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise