Datasheet > 2SC4226

2SC4226

更新时间： 2024-11-20 12:53:43

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	79K
描述
Low noise and high gain. NF = 1.2 dB Typ. VCE = 3V, IC= 7 mA, f = 1.0 GHz

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2SC4226 数据手册

SSMMDD TTyyppee

TransistIoCrs

Product specification

2SC4226

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low noise and high gain.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz

High gain.

+0.1

1.9

-0.1

|S21e|²= 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

1.Base

2.Emitter

3.collector

1 Emitter

2 Base

3 Collector

3 Collecotr

Absolute Maximum Ratings Ta = 25

Parameter

Collector to base voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

power dissipation

3.0

100

150

Junction temperature

Storage temperature range

150

Tstg

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain *

Symbol

Testconditons

Min

Typ

Max

1.0

Unit

ICBO

IEBO

hFE

VCB = 10 V, IE = 0

VEB = 1.0 V, IC = 0

VCE = 3V, IC = 7 mA

1.0

110

250

Insertion power gain

Noise figure

VCE = 3V, IC = 7 mA, f = 1 GHz

VCE = 3 V, IC = 7 mA, f = 1 GHz

VCB = 3 V, IE = 0 , f = 1 MHz

VCE =3V, IC = 7 mA

S21e

Cre

1.2

0.7

4.5

2.5

1.5

Reverse transfer capacitance

Transition frequency

3.0

GHz

*. Pulse measurement: PW

350 s, Duty Cycle

2%.

hFE Classification

Marking

Rank

R23

R24

R25

hFE

40 80

70 140

125 250

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