生命周期: | Obsolete | 包装说明: | SUPER MINIMOLD, SC-70, 3 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.07 A |
集电极-发射极最大电压: | 12 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 5000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4225-T2R2 | NEC |
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RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC4225-T2R3 | NEC |
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RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Sili | |
2SC4226 | SECOS |
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NPN Silicon Plastic Encapsulated Transistor | |
2SC4226 | RENESAS |
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NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise | |
2SC4226 | TYSEMI |
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Low noise and high gain. NF = 1.2 dB Typ. VCE = 3V, IC= 7 mA, f = 1.0 GHz | |
2SC4226 | SHIKUES |
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NPN SILICON RF TRANSISTOR | |
2SC4226 | NEC |
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HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD | |
2SC4226 | KEXIN |
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NPN Silicon Epitaxial Transistor | |
2SC4226 | UTC |
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NPN | |
2SC4226 | BL Galaxy Electrical |
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12V,0.1A,General Purpose NPN Bipolar Transistor |