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2SC4226 PDF预览

2SC4226

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管射频光电二极管放大器
页数 文件大小 规格书
8页 149K
描述
NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold

2SC4226 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SUPER MINIMOLD, SC-70, 3 PINReach Compliance Code:compliant
风险等级:5.58其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A基于收集器的最大容量:1.5 pF
集电极-发射极最大电压:12 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):4500 MHz
Base Number Matches:1

2SC4226 数据手册

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PreliminaryData Sheet  
2SC4226  
NPN Silicon RF Transistor  
R09DS0022EJ0200  
Rev.2.00  
Jun 29, 2011  
NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold  
DESCRIPTION  
The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.  
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold  
package.  
FEATURES  
Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz  
High gain : S21e2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz  
3-pin super minimold package  
<R>  
ORDERING INFORMATION  
Part Number  
2SC4226  
Order Number  
2SC4226-A  
Package  
Quantity  
50 pcs (Non reel)  
3 kpcs/reel  
Supplying Form  
3-pin super  
Minimold  
• 8 mm wide embossed taping  
• Pin 3 (Collector) face the perforation side of the tape  
2SC4226-T1  
2SC4226-T1-A  
(Pb-Free)  
Remark To order evaluation samples, please contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
20  
12  
V
3
100  
V
mA  
mW  
°C  
°C  
Note  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
Ptot  
150  
Tj  
150  
Tstg  
65 to +150  
Note Free air  
CAUTION  
Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
R09DS0022EJ0200 Rev.2.00  
Jun 29, 2011  
Page 1 of 6  

2SC4226 替代型号

型号 品牌 替代类型 描述 数据表
2SC4226-T1-A RENESAS

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NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise
2SC4226-T1 RENESAS

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NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise

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