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2SC3637_2014 PDF预览

2SC3637_2014

更新时间: 2024-09-16 01:19:43
品牌 Logo 应用领域
锦美电子 - JMNIC /
页数 文件大小 规格书
4页 219K
描述
Silicon NPN Power Transistors

2SC3637_2014 数据手册

 浏览型号2SC3637_2014的Datasheet PDF文件第2页浏览型号2SC3637_2014的Datasheet PDF文件第3页浏览型号2SC3637_2014的Datasheet PDF文件第4页 
JMnic  
Product Specification  
Silicon NPN Power Transistors  
2SC3637  
DESCRIPTION  
·With TO-3PN package  
·High voltage ,high speed  
·High reliability  
APPLICATIONS  
·Ultrahigh-definition CRT display horizontal  
deflection output applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3PN) and symbol  
3
Emitter  
Absolute maximum ratings(Ta=)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
900  
500  
7
UNIT  
V
Open emitter  
Open base  
V
Open collector  
V
10  
A
ICM  
Collector current-peak  
Collector power dissipation  
Junction temperature  
Storage temperature  
20  
A
PC  
TC=25  
90  
W
Tj  
150  
-55~150  
Tstg  

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