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2SC3646 PDF预览

2SC3646

更新时间: 2024-11-20 06:24:03
品牌 Logo 应用领域
科信 - KEXIN 晶体开关晶体管高压
页数 文件大小 规格书
3页 511K
描述
High-Voltage Switching Applications

2SC3646 数据手册

 浏览型号2SC3646的Datasheet PDF文件第2页浏览型号2SC3646的Datasheet PDF文件第3页 
SMD Type  
Transistors  
High-Voltage Switching Applications  
2SC3646  
Features  
Adoption of FBET, MBIT Processes  
High Breakdown Voltage and Large Current Capacity  
Fast Switching Time  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
120  
100  
V
6
V
Collector Current  
1
A
Collector Current (Pulse)  
ICP  
2
500  
A
PC  
mW  
W
Collector Power Dissipation  
PC *  
Tj  
1.3  
Jumction temperature  
150  
Storage temperature Range  
Tstg  
-55 to +150  
* Mounted on ceramic board (250 mm2 x 0.8 mm)  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
IEBO  
Testconditons  
Min  
Typ  
Max  
100  
100  
Unit  
nA  
nA  
V
Collector Cut-off Current  
VCB = 100V , IE = 0  
VEB = 4V , IC = 0  
Emitter Cut-off Current  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
V(BR)CBO IC = 10uA , IE = 0  
V(BR)CEO  
120  
100  
6
V
IC = 1mA , RBE =  
V(BR)EBO IE = 10uA , IC = 0  
hFE VCE = 5V , IC = 100mA  
V
100  
400  
0.6  
1.2  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Gain-Bandwidth Product  
VCE(sat) IC = 400mA , IB = 40mA  
VBE(sat) IC = 400mA , IB = 40mA  
0.2  
0.85  
120  
13  
V
V
fT  
VCE = 10V , IC = 100mA  
MHz  
pF  
Collector Output Capacitance  
Cob  
VCB = 10V , IE = 0 , f = 1MHz  
Turn-On Time  
Storage Time  
Fall Time  
ton  
tstg  
tf  
80  
700  
40  
See Test Circuit.  
ns  
1
www.kexin.com.cn  

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