Datasheet > 2SC3646T-TD-E

2SC3646T-TD-E

更新时间： 2024-02-08 19:11:20

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	358K
描述
Bipolar Transistor High breakdown voltage and large current capacity

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2SC3646T-TD-E 数据手册

Ordering number : EN2005C

2SA1416/2SC3646

Bipolar Transistor

http://onsemi.com

(–)

–)

(

), (

sat PNP)NPN Single PCP

100V, ( 1A, Low V

Features

•

Adoption of FBET, MBIT processes

•

High breakdown voltage and large current capacity

Fast switching speed

Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

( ) : 2SA1416

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

(--)120

(--)100

(--)6

Unit

CBO

CEO

EBO

(--)1

Collector Current (Pulse)

(--)2

500

Collector Dissipation

When mounted on ceramic substrate (250mm²0.8mm)

1.3

Junction Temperature

Storage Temperature

150

Tstg

--55 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

Product & Package Information

unit : mm (typ)

• Package

: PCP

7007B-004

• JEITA, JEDEC

: SC-62, SOT-89, TO-243

•

Minimum Packing Quantity : 1,000 pcs./reel

Top View

2SA1416S-TD-E

2SA1416T-TD-E

2SC3646S-TD-E

2SC3646T-TD-E

4.5

1.6

Packing Type: TD

1.5

Marking

0.4

0.5

0.4

1.5

3.0

RANK

2SA1416

2SC3646

0.75

Electrical Connection

1 : Base

2 : Collector

3 : Emitter

Bottom View

PCP

2SA1416

2SC3646

Semiconductor Components Industries, LLC, 2013

September, 2013

82212 TKIM/31010EA TKIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2005-1/7

12 3 4 5 6 7

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2SC3646T-TD-E 替代型号

型号	品牌	替代类型	描述	数据表
2SC3646	ONSEMI	功能相似	Bipolar Transistor High breakdown voltage and large current capacity

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