是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.66 |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PSSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 120 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3647G-S-AB3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN | |
2SC3647G-T-AB3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN | |
2SC3647G-X-AB3-R | UTC |
获取价格 |
HIGH-VOLTAGE SWITCHING APPLICATIONS | |
2SC3647L-AB3-R | UTC |
获取价格 |
HIGH-VOLTAGE SWITCHING APPLICATIONS | |
2SC3647L-R-AB3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FRE | |
2SC3647L-S-AB3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FRE | |
2SC3647L-T-AB3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FRE | |
2SC3647L-X-AB3-R | UTC |
获取价格 |
HIGH-VOLTAGE SWITCHING APPLICATIONS | |
2SC3647R | SWST |
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功率三极管 | |
2SC3647-R | LGE |
获取价格 |
NPN Transistors |