Datasheet > 2SC3647U

2SC3647U

更新时间： 2024-09-22 14:54:03

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	865K
描述
功率三极管

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2SC3647U 数据手册

2SC3647U

NPN Silicon Epitaxial Planar Power Transistor

Applications

• For power amplification applications

Absolute Maximum Ratings (T_a= 25

)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

120

100

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Peak Collector Current

I_CM

0.5 ¹⁾

1.5 ²⁾

P_C

Collector Power Dissipation

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

R_θJA

Max.

Unit

250 ¹⁾

Maximum Junction to Ambient

83 ²⁾

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate

1 / 5

Dated: 17/04/2023 Rev: 02

12 3 4 5

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