2SC3647S-TD-E

更新时间： 2024-11-24 12:33:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
7页	337K
描述
Bipolar Transistor

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中文翻译

获取价格

数据手册

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2SC3647S-TD-E 数据手册

Ordering number : EN2006D

2SA1417/2SC3647

Bipolar Transistor

(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP

http://onsemi.com

Features

•

Adoption of FBET, MBIT processes

•

High breakdown voltage and large current capacity

•

Fast switching speed

•

Ultrasmall size making it easy to provide high-density small-sized hybrid ICs

( ) : 2SA1417

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

(--)120

(--)100

(--)6

Unit

CBO

CEO

EBO

(--)2

Collector Current (Pulse)

(--)3

500

Collector Dissipation

When mounted on ceramic substrate (250mm²0.8mm)

1.5

Junction Temperature

Storage Temperature

150

Tstg

--55 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: PCP

7007B-004

• JEITA, JEDEC

: SC-62, SOT-89, TO-243

•

Minimum Packing Quantity : 1,000 pcs./reel

Top View

2SA1417S-TD-E

2SA1417T-TD-E

2SC3647S-TD-E

2SC3647T-TD-E

4.5

1.6

Packing Type: TD

1.5

Marking

0.4

0.5

0.4

1.5

3.0

RANK

2SA1417

2SC3647

0.75

Electrical Connection

1 : Base

2 : Collector

3 : Emitter

Bottom View

PCP

2SA1417

2SC3647

Semiconductor Components Industries, LLC, 2013

September, 2013

90512 TKIM/22006EA MSIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2006-1/7

12 3 4 5 6 7

中文翻译

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