Ordering number : EN2006D
2SA1417/2SC3647
Bipolar Transistor
(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
http://onsemi.com
Features
•
Adoption of FBET, MBIT processes
•
High breakdown voltage and large current capacity
•
Fast switching speed
•
Ultrasmall size making it easy to provide high-density small-sized hybrid ICs
( ) : 2SA1417
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
(--)120
(--)100
(--)6
Unit
V
V
CBO
V
V
CEO
V
V
EBO
I
C
(--)2
A
Collector Current (Pulse)
I
CP
(--)3
A
500
mW
W
Collector Dissipation
P
C
When mounted on ceramic substrate (250mm2 0.8mm)
1.5
×
Junction Temperature
Storage Temperature
Tj
150
C
°
°
Tstg
--55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: PCP
7007B-004
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
•
Minimum Packing Quantity : 1,000 pcs./reel
Top View
2SA1417S-TD-E
2SA1417T-TD-E
2SC3647S-TD-E
2SC3647T-TD-E
4.5
1.6
Packing Type: TD
1.5
TD
1
2
3
Marking
0.4
0.5
0.4
1.5
3.0
RANK
RANK
2SA1417
2SC3647
0.75
Electrical Connection
2
2
1 : Base
2 : Collector
3 : Emitter
1
1
Bottom View
3
3
PCP
2SA1417
2SC3647
Semiconductor Components Industries, LLC, 2013
September, 2013
90512 TKIM/22006EA MSIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2006-1/7