Datasheet > 2SC3647-T

2SC3647-T

更新时间： 2024-09-22 01:13:51

品牌	Logo	应用领域
鲁光 - LGE		开关晶体管
页数	文件大小	规格书
3页	1547K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SC3647-T 数据手册

2SC3647

NPN Transistors

1.70 0.1

■ Features

● High breakdown voltage and large current capacity.

● Complementary to 2SA1417

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

VCBO

VCEO

VEBO

120

100

Collector Current - Continuous

Peak Collector Current

℃

Collector Power Dissipation

Junction Temperature

500

150

Storage Temperature Range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

120

100

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 1 mA，RBE= ∞

= 100μA， I = 0

CB= 100 V , I = 0

EB= 4V , I =0

E= 0

CBO

EBO

0.1

0.4

1.2

400

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=1A, I

=100mA

0.13

0.85

=1A, I

stg

CE= 5V, I

C= 100mA

100

Turn-ON Time

1000

See sepcified Test Circuit.

Storage Time

Fall Time

Collector output capacitance

Transition frequency

CB= 10V,f=1MHz

CE= 10V, I = 100mA

120

MHz

■ Classification of hfe

Type

Range

Marking

2SC3647-R

100-200

CCR

2SC3647-S

140-280

CCS

2SC3647-T

200-400

CCT

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3

中文翻译

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